BSI IMAGE SENSOR PACKAGE WITH VARIABLE-HEIGHT SILICON FOR EVEN RECEPTION OF DIFFERENT WAVELENGTHS

摘要

A microelectronic image sensor assembly (10) for backside illumination and method of making same are provided. The assembly (10) includes a microelectronic element (100) having contacts (106) exposed at a front face (102) and light sensing elements (114) arranged to receive light of different wavelengths through a rear face (104). A semiconductor region (110) has a first thickness (112a) between the first light sensing element (114a) and the rear face (104) and a second thickness (112b) between the second light sensing element (114b) and the rear face (104) such that the first and second light sensing elements (114a, 114b) receive light of substantially the same intensity. A dielectric region (116) is provided at least substantially filling a space of the semiconductor region (110) adjacent at least one of the light sensing elements (114). The dielectric region (116) may include at least one light guide (280).