发明名称 WAFER PROCESSING BASE
摘要 Provided is a substrate for processing a wafer. The present invention can provide a substrate having excellent heat resistance and dimensional stability. The present invention can provide a substrate that has excellent stress relaxation properties, and therefore can prevent a wafer from being destroyed due to residual stress. Also, the present invention can provide a substrate that can prevent a wafer from being damaged or fried off due to a non-uniformly applied pressure during the wafer processing process, and that exhibits excellent cuttability. For these reasons, the substrate can be useful as a sheet for processing a wafer in various wafer preparation processes such as dicing, back-grinding, and picking-up.
申请公布号 US2012202036(A1) 申请公布日期 2012.08.09
申请号 US201113316264 申请日期 2011.12.09
申请人 KIM SE RA;JOO HYO SOOK;CHANG SUK KY;SHIM JUNG SUP;LG CHEM, LTD. 发明人 KIM SE RA;JOO HYO SOOK;CHANG SUK KY;SHIM JUNG SUP
分类号 C08L33/08;B29C35/08 主分类号 C08L33/08
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