FABRICATION METHOD OF SELF-ALIGNED CHANNEL FOR TRENCH-GATE ACCUMULATION-MODE SIC MOSFET

摘要

PURPOSE: A fabrication method of a self-aligned channel for a trench-gate accumulation-mode SIC(Silicon Carbide) MOSFET(Metal Oxide Semiconductor Field Effect Transistor) is provided to form an n-base layer having a predetermined thickness by self-aligning a gate trench and a p-base layer with a single photographing work. CONSTITUTION: A low concentration n-type drift layer(610) is formed on a high concentration N type substrate(600). An N-base layer(620) is formed on the low concentration n-type drift layer. A source layer(630) is formed on the N-base layer. A polysilicon layer(640) is formed on the source layer. A silicon nitride film(650) is formed on the polysilicon layer.