| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of a fine pattern capable of forming a line pattern having a narrower line width than a resolution limit of an exposure device. <P>SOLUTION: Disclosed is a formation method of a fine pattern comprising: a step of forming a negative-type photoresist film on the thin film to be etched; a step of drying the photoresist film under a reduced-pressure atmosphere; a step of exposing the dried photoresist film by irradiating the photoresist film with an exposure light using a photomask having an exposure light transmission part having a narrower width than a resolution limit of the exposure device to be used; a step of forming an etching mask from the exposed photoresist film by developing the photoresist film; and a step of etching the thin film using the etching mask. <P>COPYRIGHT: (C)2012,JPO&INPIT |
