| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that, when a wafer is heated under vacuum atmosphere before forming a PZT piezoelectric layer by arc-discharge ion plating (ADRIP), the applied voltage cannot be increased due to low dielectric breakdown voltage of the PZT piezoelectric layer, resulting in low reliability of a piezoelectric actuator. <P>SOLUTION: A monocrystalline silicon substrate is thermally oxidized to form a silicon oxide layer, a Ti close adhesion layer is formed on the silicon oxide layer by sputtering, and a Pt lower electrode layer is successively formed on the Ti close adhesion layer by sputtering. In an ADRIP device, the wafer is heated to about 500°C in oxygen atmosphere as a pretreatment of ADRIP main treatment. In the same ADRIP device, Pb evaporation amount of a Pb evaporation source, Zr evaporation amount of a Zr evaporation source and Ti evaporation amount of a Ti evaporation source are controlled successively so that the composition ratio Pb/(Zr+Ti) of PbZr<SB POS="POST">x</SB>Ti<SB POS="POST">1-x</SB>O<SB POS="POST">3</SB>is 1.2 or less. Finally, a Pt upper electrode layer is formed on the PZT piezoelectric layer by sputtering. <P>COPYRIGHT: (C)2012,JPO&INPIT |
