| 摘要 |
<P>PROBLEM TO BE SOLVED: To stabilize a pressure in a chamber at changeover of steps in plasma processing in which an etching step and a deposition step are repeated alternately. <P>SOLUTION: A dry etching device 1 in which dry etching is performed by repeating alternately an etching step of etching a substrate 21 and a deposition step of forming a protection film to the substrate 21 by deposition, has: a chamber 2 accommodating the substrate 21; an antenna 3 and a high-frequency power supply part 5A for generating a plasma; flow rate adjustment parts 8A and 8B for gas supplied from gas sources 7A and 7B; and a pressure control valve 12 for controlling a pressure in the chamber 2. In the etching step and the deposition step of the second or subsequent times after starting of the dry etching, an opening degree of the pressure control valve 12 is maintained at an opening degree in a step immediately before the step for a preliminarily defined time period (an opening degree control mode), and thereafter, the opening degree of the valve is controlled so as to maintain a preliminarily defined pressure (a pressure control mode), respectively. <P>COPYRIGHT: (C)2012,JPO&INPIT |
