SILICON CARBIDE BIPOLAR JUNCTION TRANSISTOR COMPRISING SHIELDING REGIONS AND METHOD OF MANUFACTURING THE SAME

摘要

A silicon carbide (SiC) bipolar junction transistor (BJT) and a method of manufacturing such a SiC BJT is provided. The SiC BJT comprises a collector region (220) having a first conductivity type, a base region (240) having a second conductivity type opposite to the first conductivity type, and an emitter region (260) having the first conductivity type arranged as a stack. The intrinsic base region (245), defined by the portion of the base region interfacing the emitter region, comprises a first portion (246) having a first dopant dose. The SiC BJT further comprises two shielding regions (244) having the second conductivity type and a second dopant dose being higher than the first dopant dose. The shielding regions laterally surround the first portion and vertically extend further down in the stack than the first portion. The invention is advantageous in that SiC BJTs with improved blocking capabilities and still sufficiently high current gain are provided.