SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

This semiconductor device includes: a semiconductor layer comprising a wide bandgap semiconductor having a gate trench in which a sidewall and a bottom wall are formed; a gate insulating film formed on the sidewall and the bottom wall of the gate trench; and a gate electrode embedded in the gate trench so as to face the semiconductor layer with the gate insulating film interposed therebetween. Therein, the semiconductor layer includes: a first conductive-type source region formed so as to be exposed to the surface side of the semiconductor layer, and forming a section of the sidewall of the gate trench; a second conductive-type body region formed so as to contact the source region on the rear-surface side of the semiconductor layer in relation to the source region, and forming a section of the sidewall of the gate trench; a first conductive-type drift region formed so as to contact the body region on the rear-surface side of the semiconductor layer in relation to the body region, and forming the bottom wall of the gate trench; and a first breakdown voltage-maintaining region of a second conductivity type formed selectively in a region that is a part of the gate trench in an edge section of the gate trench where the sidewall and the bottom wall intersect.