| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a nonvolatile memory device, which can prevent a reduction in yield by suppressing variations in initial breakdown voltage among nonvolatile memory elements. <P>SOLUTION: The method for manufacturing a nonvolatile memory device includes: a step B of forming, above a plug formed on a substrate, a laminated structure comprising a first electrode, a second electrode positioned above the first electrode, and a variable resistance layer interposed between the first electrode and the second electrode; and a step C of forming second wiring in a plane which is above the laminated structure and the plug and is parallel to a main surface of the substrate. In the step C, the second wiring is formed so as to be electrically connected directly to the second electrode of the laminated structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
