发明名称 |
METHOD FOR FORMATION FERROELECTRICS THIN FILM AND METHOD FOR MANUFACTURING DEVICE OF PLANAR STRUCTURE |
摘要 |
PURPOSE: Methods for manufacturing a ferroelectric thin film and a planar structure device are provided to have excellent dielectric properties by optimizing an emission condition of an excimer laser. CONSTITUTION: A preliminary amorphous ferroelectric thin film(22) is formed on a substrate(10). The thickness of the preliminary amorphous ferroelectric thin film is more than 50nm. The preliminary amorphous ferroelectric thin film includes one or more selected from Ba, Sr, Pb, Ca, La, K, Na, Ti, Zr, Nb, Ta and Fe. An excimer laser is emitted to the preliminary amorphous ferroelectric thin film.
|
申请公布号 |
KR20120089040(A) |
申请公布日期 |
2012.08.09 |
申请号 |
KR20110010134 |
申请日期 |
2011.02.01 |
申请人 |
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
KANG, CHONG YUN;KANG, MIN GYU;YOON, SEOK JIN;KIM, JIN SANG;CHOI, JI WON;JANG, HO WON;DO, YOUNG HO;OH, SEUNG MIN |
分类号 |
C30B29/32;C01G23/04;H01L21/31;H01L27/04 |
主分类号 |
C30B29/32 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|