| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device enabling high image quality, multi-pixelation, and reduction in cost and power consumption. <P>SOLUTION: A solid-state imaging device 100 has a photoelectric conversion layer 22 containing an organic material formed above a substrate 10, and a signal reading circuit S formed on the substrate 10 and reading a signal depending on an electric charge generated in the photoelectric conversion layer 22. The reading circuit S has: an accumulation part 11 accumulating the electric charge generated in the photoelectric conversion layer 22; an FD (Floating Diffusion) 13 to which the electric charge accumulated in the accumulation part 11 is transferred; a transfer transistor (Tr) 30 transferring the electric charge in the accumulation part 11 to the FD 13; a reset Tr 31 resetting a potential of the FD 13; and an output Tr 32 outputting a signal depending on the potential of the FD 13. The solid-state imaging device 100 has a controller 104 controlling a reset voltage to be supplied to the reset Tr 31 to inject electric charge to the accumulation part 11 from a power source that supplies the reset voltage, and then controlling the reset voltage to perform driving for each frame to exhaust a part of the electric charge injected to the accumulation part 11 to the power source. <P>COPYRIGHT: (C)2012,JPO&INPIT |
