| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of forming a high performance photodiode in which detection accuracy is prevented from decreasing while suppressing variation in the output characteristics of the photodiode. <P>SOLUTION: By using a given gate metal, a shield portion 34a covering a part becoming an intrinsic semiconductor region, out of a first semiconductor layer 30a for a photodiode, is formed on a gate insulating film 29, and first through fourth gate electrodes 34b-34e covering a part becoming a channel region, out of second through fifth semiconductor layers 30b-30e for a thin film transistor, are formed on the gate insulating film 29. Subsequently, an n-type region and a p-type region are formed on the first semiconductor layer 30a by using the shield portion 34a as a mask, and then the shield portion 34a is removed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
