发明名称 |
THIN FILM TRANSISTOR SUBSTRATE HAVING HYBRID CMOS STRUCTURE AND OPTICAL SENSOR ARRAY USING THE SUBSTRATE |
摘要 |
The present invention relates to a thin film transistor substrate in which a polycrystalline silicon thin film transistor having a coplanar structure with an insulating interlayer and an amorphous silicon thin film transistor having an inverted staggered structure with a gate insulating layer are formed on one substrate and the insulating interlayer and the gate insulating layer are formed as the same layer. When a hybrid CMOS structure is used, the manufacturing process is simplified and a characteristic of the amorphous silicon thin film transistor and the characteristic of the polycrystalline silicon thin film transistor can be simultaneously obtained with one substrate, and, as a result, the applicability of the thin film transistor is increased. |
申请公布号 |
WO2012067409(A3) |
申请公布日期 |
2012.08.09 |
申请号 |
WO2011KR08721 |
申请日期 |
2011.11.15 |
申请人 |
SILICON DISPLAY CO., LTD.;KANG, MOON HYO;HUR, JI HO |
发明人 |
KANG, MOON HYO;HUR, JI HO |
分类号 |
H01L29/786;H01L27/14 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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