发明名称 |
MAGNETIC MEMORY WITH ASYMMETRIC ENERGY BARRIER |
摘要 |
A magnetic tunnel junction memory cell includes a ferromagnetic reference layer, a ferromagnetic free layer, and a non-magnetic barrier layer separating the ferromagnetic reference layer from the ferromagnetic free layer. The magnetic tunnel junction cell has an asymmetric energy barrier for switching between a high resistance data state and a low resistance data state. Memory devices and methods are also described. |
申请公布号 |
US2012201075(A1) |
申请公布日期 |
2012.08.09 |
申请号 |
US201213446458 |
申请日期 |
2012.04.13 |
申请人 |
ZHU WENZHONG;LOU XIAOHUA;DIMITROV DIMITAR V.;SEAGATE TECHNOLOGY LLC |
发明人 |
ZHU WENZHONG;LOU XIAOHUA;DIMITROV DIMITAR V. |
分类号 |
G11C11/16 |
主分类号 |
G11C11/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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