REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY

摘要

Provided is an EUV mask blank that has sufficiently high etching selectivity in the etching conditions of an absorbent layer, does not have increased line-edge roughness after pattern formation and can obtain a high-resolution pattern. A reflective mask blank for EUV lithography formed of a reflecting layer for the reflection of EUV light, an absorbent layer for the absorption of EUV light, and a hard-mask layer on a substrate, in this order, being characterized in that the absorbent layer contains at least one of tantalum (Ta) and palladium (Pd) as a main component, and the hard-mask layer contains chromium (Cr), either one of nitrogen (N) and oxygen (O), and hydrogen (H), wherein the total content percentage of Cr and either one of N and O is 85 to 99.9 at% and the content percentage of H is 0.1 to 15 at%.