发明名称 CHALCOGENIDE SEMICONDUCTOR THIN FILM AND FABRICATION METHOD THEREOF
摘要 PURPOSE: A chalcogenide semiconductor thin film and a manufacturing method thereof are provided to produce high quality solar cell absorption layers in large quantities by performing a safe manufacturing process and using non-toxic materials. CONSTITUTION: A precursor powder is mixed with hydrazine monohydrate or an alcohol solvent. The powder and the mixture of the solvent are coated on a substrate. A crystallized thin film is formed by thermally processing the coated mixture. The particle size of the precursor powder is less than 300nm. The mixture is thermally processed in the range of from 400 to 500°C.
申请公布号 KR20120089159(A) 申请公布日期 2012.08.09
申请号 KR20110010358 申请日期 2011.02.01
申请人 INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY 发明人 MOON, JOO HO;WOO, KYOO HEE;KIM, YOUNG WOO
分类号 C09D11/03;H01L31/042 主分类号 C09D11/03
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