CHALCOGENIDE SEMICONDUCTOR THIN FILM AND FABRICATION METHOD THEREOF
摘要
PURPOSE: A chalcogenide semiconductor thin film and a manufacturing method thereof are provided to produce high quality solar cell absorption layers in large quantities by performing a safe manufacturing process and using non-toxic materials. CONSTITUTION: A precursor powder is mixed with hydrazine monohydrate or an alcohol solvent. The powder and the mixture of the solvent are coated on a substrate. A crystallized thin film is formed by thermally processing the coated mixture. The particle size of the precursor powder is less than 300nm. The mixture is thermally processed in the range of from 400 to 500°C.
申请公布号
KR20120089159(A)
申请公布日期
2012.08.09
申请号
KR20110010358
申请日期
2011.02.01
申请人
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY