| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a reflective mask, capable of obtaining a reflection signal having sufficient contrast even for a reflective mask for EUV exposure, when detecting an alignment mark using a laser drawing device, thus forming a resist pattern for forming a light-shielding region with good position accuracy, and to provide a manufacturing method of the same. <P>SOLUTION: The above-mentioned problem is solved by configuring an alignment mark formed on a reflective mask with slit structures having a fine line width and a space less than the resolution limit for a wavelength of alignment light of a laser drawing device and reducing intensity of a reflection signal in alignment light irradiation. <P>COPYRIGHT: (C)2012,JPO&INPIT |
