| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device in which variations in a pattern dimension of an amorphous carbon film were reduced. <P>SOLUTION: A manufacturing method of a semiconductor device includes: a step of forming a base film on a semiconductor substrate; a step of forming an amorphous carbon film on the base film; a step of forming a pattern of the amorphous carbon film; and a step of etching the base film using the amorphous carbon film as a mask. As the amorphous carbon film advances from a surface of the amorphous carbon film towards a surface contacting the base film in its thickness direction, a film density of the amorphous carbon film decreases. <P>COPYRIGHT: (C)2012,JPO&INPIT |
