| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which secures adequate heat radiation characteristics while reducing heat stress, and to provide a manufacturing method of the semiconductor laser device. <P>SOLUTION: A semiconductor laser device 100 according to one embodiment of this invention has a planar lightwave circuit (PLC) substrate 11, a PLC electrode 12, a solder bump 14, and a laser diode (LD) 15. The PLC electrode 12 is formed on the PLC substrate 11 and an opening 18 is formed at a part of the PLC electrode 12. The LD 15 is disposed above the PLC electrode 12. The solder bump 14 is formed between the PLC electrode 12 and the LD 15. A surface of the PLC substrate 11, which is exposed through the opening 18, does not contact with the solder bump 14. <P>COPYRIGHT: (C)2012,JPO&INPIT |
