| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device accelerated in switching speed of a transistor. <P>SOLUTION: A semiconductor device comprises: a semiconductor layer 10 formed on a part of an insulating layer; a first transistor 20 formed on a side surface 10a of the semiconductor layer 10 and including a first gate insulating film 21, a first gate electrode 22, and two first impurity layers 23, 24 that become a source and a drain; and a second transistor 30 formed on a side surface 10b of the semiconductor layer 10 and including a second gate insulating film 31, a second gate electrode 32, and two second impurity layers 33, 34 that become a source and a drain. <P>COPYRIGHT: (C)2012,JPO&INPIT |
