| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma process device capable of suppressing a film formed on a surface of a member inside a processing chamber from peeling. <P>SOLUTION: A plasma process device comprises: a processing chamber 1; a first electrode 4 in which a processed substrate 3 is placed in the processing chamber 1; a second electrode 2 facing in parallel with the first electrode 4 in the processing chamber 1; processing gas supply means 8 for supplying a desired processing gas to a processing space between the first electrode 4 and the second electrode 2; exhaust means for performing exhaust and pressure adjustment in the processing chamber 1; and a power supply 7 which supplies a voltage for generating a plasma of the processing gas by supplying electric power to the processing space to the second electrode 2. The first electrode 4 includes a dug part 4a in at least a part of a region other than a placement region on a surface on the side on which the processed substrate 3 is placed. <P>COPYRIGHT: (C)2012,JPO&INPIT |
