| 摘要 |
<p>A method for manufacturing a photoelectric conversion element (10) comprising: holding, on a transport tray (25), a layered structure (24) which includes a p-type amorphous silicon layer (12), an i-type a-amorphous silicon layer (13), an n-type single crystal silicon substrate (14), an i-type amorphous silicon layer (15), and an n-type amorphous silicon layer (16); forming a transparent electroconductive layer (17) on the surface of the layered structure (24) while held on the transport tray (25); and forming a metal layer (18) on the surface of the transparent electroconductive layer (17) while held on the transport tray (25).</p> |
