| 摘要 |
PURPOSE: A row decoder and a nonvolatile memory device are provided to reduce an area by decreasing the number of wires. CONSTITUTION: A row decoder(150) includes a plurality of drivers(410,420,430,440) and a plurality of input terminals. A memory cell array includes a plurality of memory cells. A voltage generating unit generates a plurality of voltages corresponding to an operation mode of the plurality of the memory cells. A plurality of drivers generate a control signal for an operation mode using the corresponding voltage and outputs the control signal to the corresponding memory cell. A voltage is directly applied to the corresponding driver. |
