发明名称 SELECTIVE METAL PLATING METHOD OF SUBSTRATE, AND FORMED CIRCUIT COMPONENT MANUFACTURED BY THE METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a method basically improved in consideration of the defect of a method using a laser for a structure formation in a plastic surface and a selective metal plating. <P>SOLUTION: This invention relates to a selective metal plating method for the surface of a plastic substrate and the formed circuit component manufactured by the method. In the method, the plastic substrate contains tectoalumino silicate salt as an additive agent, which is naturally or synthetically manufactured, and the tectoalumino silicate salt is attained by the ablation treatment for the surface of the plastic substrate, then seeding is performed, and finally metal plating is performed without applying electric current from the outside. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012149347(A) 申请公布日期 2012.08.09
申请号 JP20120004584 申请日期 2012.01.13
申请人 LPKF LASER & ELECTRONICS AG 发明人 JOHN WOLFGANG;ROESENER BERND
分类号 C23C18/20;C23C18/16;C23C18/22;C23C18/40 主分类号 C23C18/20
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