发明名称 |
THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME |
摘要 |
The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed.
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申请公布号 |
US2012199836(A1) |
申请公布日期 |
2012.08.09 |
申请号 |
US201213448969 |
申请日期 |
2012.04.17 |
申请人 |
KATSUHARA MAO;YONEYA NOBUHIDE;SONY CORPORATION |
发明人 |
KATSUHARA MAO;YONEYA NOBUHIDE |
分类号 |
H01L51/52;H01L51/10 |
主分类号 |
H01L51/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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