发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A gate electrode achieves a desired work function in a semiconductor device including a field-effect transistor equipped with a gate electrode composed of a metal nitride layer. The semiconductor device includes a silicon substrate and a field-effect transistor provided on the silicon substrate and having a gate insulating film and a gate electrode provided on the gate insulating film. The gate insulating film includes a high-permittivity insulating film formed of a metal oxide, a metal silicate, a metal oxide introduced with nitrogen, or a metal silicate introduced with nitrogen, and the gate electrode includes at least a metal nitride layer containing Ti and N. At least a part which is in contact with the gate insulating film of the metal nitride layer has a molar ratio between Ti and N (N/Ti ratio) of not less than 1.15 and a film density of not less than 4.7 g/cc.
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申请公布号 |
US2012199919(A1) |
申请公布日期 |
2012.08.09 |
申请号 |
US201013386259 |
申请日期 |
2010.07.29 |
申请人 |
NAKAGAWA TAKASHI;KITANO NAOMU;MATSUO KAZUAKI;KOSUDA MOTOMU;TATSUMI TORU;CANON ANELVA CORPORATION |
发明人 |
NAKAGAWA TAKASHI;KITANO NAOMU;MATSUO KAZUAKI;KOSUDA MOTOMU;TATSUMI TORU |
分类号 |
H01L29/772;C23C16/503;C23C16/52;H01L21/336 |
主分类号 |
H01L29/772 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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