发明名称 EXTREME HIGH MOBILITY CMOS LOGIC
摘要 A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.
申请公布号 US2012199813(A1) 申请公布日期 2012.08.09
申请号 US201213450359 申请日期 2012.04.18
申请人 DATTA SUMAN;HUDAIT MANTU K.;DOCZY MARK L.;KAVALIEROS JACK T.;AMIAN MAJUMDAR;BRASK JUSTIN K.;JIN BEEN-YIH;METZ MATTHEW V.;CHAU ROBERT S.;INTEL CORPORATION 发明人 DATTA SUMAN;HUDAIT MANTU K.;DOCZY MARK L.;KAVALIEROS JACK T.;AMIAN MAJUMDAR;BRASK JUSTIN K.;JIN BEEN-YIH;METZ MATTHEW V.;CHAU ROBERT S.
分类号 H01L27/092;H01L21/8238 主分类号 H01L27/092
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