| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which hardly causes variations in electric characteristics due to microfabrication. <P>SOLUTION: A semiconductor device includes: an oxide semiconductor film including a first region, a pair of second regions contacting with side surfaces of the first region, and a pair of third regions contacting with side surfaces of the pair of second regions; a gate insulation film provided on the oxide semiconductor film; and a first electrode overlapping with the first region on the gate insulation film. The first region is a c-axis aligned crystalline (CAAC) oxide semiconductor region, and the pair of second regions and the pair of third regions are amorphous oxide semiconductor regions including dopants. The dopant concentration of the pair of third regions is higher than that of the pair of second regions. <P>COPYRIGHT: (C)2012,JPO&INPIT |
