发明名称 SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To improve the uniformity of in-plane temperatures of a substrate when the substrate is processed by heating. <P>SOLUTION: A substrate processing apparatus includes: a processing chamber processing a substrate; a substrate support part supporting the substrate in the processing chamber; a heating part which has multiple heat sources provided facing a substrate support surface of the substrate support part and arranged adjacent to each other so as to be spaced a predetermined distance away from each other; and a filter provided between the heating part and the substrate support part. When the filter transmissivity in a region facing a first heat source group forming an outer periphery of a heat source group composed of the multiple heat sources is referred to as a first transmissivity and the filter transmissivity in a region facing a second heat source group that is different from the first heat source group, out of the multiple heat sources, is referred to as a second transmissivity, the first transmissivity is higher than the second transmissivity. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012151389(A) 申请公布日期 2012.08.09
申请号 JP20110010523 申请日期 2011.01.21
申请人 HITACHI KOKUSAI ELECTRIC INC;MEJIRO PRECISION:KK 发明人 SHINO KAZUHIRO;WADA YUICHI;TOKUSHIMA SHINOBU
分类号 H01L21/26;H01L21/31 主分类号 H01L21/26
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