| 摘要 |
In one embodiment, a semiconductor device includes a substrate including a step which includes a first upper surface, a second upper surface having a height lower than a height of the first upper surface, and a step side surface located between the first and second upper surfaces. The device further includes a gate insulator provided continuously on the step side surface and the second upper surface of the substrate, and a gate electrode provided on the second upper surface of the substrate via the gate insulator to contact the gate insulator provided on the step side surface of the substrate. The device further includes a source region of a first conductivity type under the first upper surface, a drain region of a second conductivity type under the second upper surface, and a side diffusion region of the second conductivity type between the step side surface and the source region,
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