SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To solve the problems such that: it is necessary to use an expensive special peeling solution requiring great care and increase in cost because reactive species of a photoresist created during processing fastens in processing of applying an aluminum material as metal wiring by dry etching; and the peeling solution damages the metal wiring, thereby deteriorating quality of the metal wiring.

SOLUTION: A semiconductor manufacturing method comprises: a metal wiring formation process which is a dry etching process using a reaction gas containing a chlorine gas or a chlorine; and a photoresist peeling process of peeling a photoresist. The photoresist peeling process includes three processes: a metal wiring exposure process of performing full ashing by using a mixed gas with a fluorocarbon gas containing oxygen and hydrogen; a cleaning process of cleaning by pure water; and an ashing process by a plasma using oxygen. Accordingly, processing by a special peeling solution becomes unnecessary and thereby high quality metal wiring can be formed at low cost.

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