| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of cleaning a semiconductor manufacturing device capable of reducing a use amount of a cleaning gas used in removing a coat adhered to an inner wall of a processing chamber compared with a conventional art. <P>SOLUTION: According to an embodiment, a method of cleaning a semiconductor manufacturing device includes a cleaning step, a concentration measurement step, a differential value calculation step, a change detection step, and an exhaust step. In the cleaning step, a cleaning gas is included in a chamber 11 to generate a reaction gas obtained by reacting deposits and the cleaning gas in the chamber 11. In the concentration measurement step, an actual reaction gas concentration in an exhaust gas is measured while exhausting the gas in the chamber 11. In the differential value calculation step, a differential value of a curve, which is obtained by arranging the actual reaction gas concentrations in a time series, to a time at actual reaction gas concentration measurement is calculated. In the change detection step, whether or not the differential value differs from a differential value calculated in the past is determined. In the exhaust step, the gas in the chamber 11 is exhausted. <P>COPYRIGHT: (C)2012,JPO&INPIT |
