| 摘要 |
A semiconductor device includes: a gate electrode (3) arranged on a substrate (1); a gate insulating layer (5) deposited over the gate electrode (3); an island of an oxide semiconductor layer (7) formed on the gate insulating layer (5) and including a channel region (7c) and first and second contact regions (7s, 7d) located on right- and left-hand sides of the channel region (7c); a source electrode (11) electrically connected to the first contact region (7s); a drain electrode (13) electrically connected to the second contact region (7d); and a protective layer (9) which is arranged on, and in contact with, the oxide semiconductor layer (7). The protective layer (9) covers the channel region (7c) on the surface of the oxide semiconductor layer (7), the sidewalls (7e) thereof located in a channel width direction with respect to the channel region (7c), and other portions (7f) thereof between the channel region (7c) and the sidewalls (7e). As a result, the hysteresis characteristic of a TFT that uses an oxide semiconductor can be improved and its reliability can be increased. |
