| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which increases an output amplitude of a preamplifier circuit and stabilizes the output amplitude. <P>SOLUTION: The memory cell 450A includes a storage element in which an electric resistance changes according to storage data. The semiconductor integrated circuit device includes a pre-amplifier circuit for amplifying a potential difference between a voltage of a normal bit line and a voltage of a reference bit line. The preamplifier circuit includes first and second amplifier circuits which are connected to the normal bit line and the reference bit line, respectively. The first and second amplifier circuits include first and second amplification stages, respectively. The semiconductor integrated circuit device further includes a main amplifier circuit 401 for further amplifying an output signal from pre-amplifier circuits 410A and 410B. <P>COPYRIGHT: (C)2012,JPO&INPIT |
