| 摘要 |
A fabricating method of a semiconductor stacking layer includes following steps. First, an amorphous silicon (α-Si) layer is formed on a substrate. Surface treatment is then performed on a surface of the α-Si layer. After that, a doped microcrystalline silicon (μc-Si) layer is formed on the treated surface of the α-Si layer, wherein interface defects existing between the α-Si layer and the doped μc-Si layer occupy an area in a cross-sectional region having a width of 1.5 micrometers and a thickness of 40 nanometers, and a ratio of the occupied area in the cross-sectional region is equal to or less than 10%. The method of fabricating the semiconductor stacking layer can be applied to a fabrication process of a semiconductor device to effectively reduce the interface defects of the semiconductor stacking layer. |
