| 摘要 |
<P>PROBLEM TO BE SOLVED: To further improve pattern formation properties in nanoimprint as compared with the conventional art. <P>SOLUTION: A nanoimprint method includes: by using a mold including a substrate 12 having a minute uneven pattern and a mold release layer 14 formed on the surface of the uneven pattern along the uneven pattern, pressing a resist 3 applied on the substrate 2; and forming a resist pattern in which the uneven pattern is transferred. In the nanoimprint method, the thickness of the mold release layer 14 and the magnitude of pressing pressure when pressing the resist 3 by using the mold are adjusted so that the widths of lines of the resist pattern have desired values. The widths of the lines of the resist pattern are thus controlled. <P>COPYRIGHT: (C)2012,JPO&INPIT |
