| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that has low power consumption, low voltage operation, and high gain and low distortion characteristics, and is capable of achieving low cost, and to provide a method of manufacturing the same. <P>SOLUTION: A p-channel FET 2 of a semiconductor device according to the present invention comprises: high-concentration p-type semiconductor layers 33 forming source/drain; a low-concentration p-type semiconductor layer 32 disposed directly under the high-concentration p-type semiconductor layers 33; first electrode layers 41 formed on the high-concentration p-type semiconductor layers 33; a high-concentration n-type semiconductor layer 22 that is formed under the low-concentration p-type semiconductor layer 32 and serves as a gate; and a second electrode layer 42 formed on the high-concentration n-type semiconductor layer 22. An n-channel FET 3 comprises: the high-concentration n-type semiconductor layers 22 forming source/drain; the high-concentration p-type semiconductor layer 33 forming a gate; a low-concentration n-type semiconductor layer 21 under the high-concentration p-type semiconductor layer 33; the first electrode layer 41; and the second electrode layers 42. <P>COPYRIGHT: (C)2012,JPO&INPIT |
