| 摘要 |
The present technology discloses a vertical discrete device with gate and drain electrodes on the same surface and method for making the same. The vertical discrete device comprises a deep gate contact that couples the buried gate to a gate electrode which is formed on the same surface as the drain electrode. The discrete device according to the present technology can be used in co-packaging power management applications and the source electrode of the discrete device may be attached to the leadframe of the package. |
