发明名称 METHOD FOR PRODUCTION OF LAMINATE
摘要 Disclosed is a novel Group III polar growth method on a sapphire substrate. Specifically disclosed is a method for producing a laminate which comprises a sapphire substrate and a single crystal layer comprising a high-Al-Content nitride of a Group III element and laminated on the sapphire substrate, through an organic metal gas phase growth process. The method comprises: a first growth step of supplying a raw material gas for growing single crystals of the nitride of the Group III element and an oxygen source gas onto the sapphire substrate to grow an initial single crystal layer having an oxygen concentration of 1 x 10 20 to 5 x 10 21 cm -3 inclusive into a thickness of 15 to 40 nm inclusive; and a second growth step of supplying the raw materials gas onto the initial single crystal layer without supplying the oxygen source gas or supplying the oxygen source gas in an amount smaller than that supplied in the first growth step together with the raw material gas thereby growing a second Group III nitride single crystal layer having an oxygen Concentration smaller than that in the initial single crystal layer.
申请公布号 KR20120088691(A) 申请公布日期 2012.08.08
申请号 KR20127007988 申请日期 2010.09.28
申请人 TOKUYAMA CORPORATION 发明人 KINOSHITA TORU;TAKADA KAZUYA
分类号 C30B29/38;C23C16/34;H01L21/205;H01L33/32 主分类号 C30B29/38
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