| 摘要 |
<p>The invention relates to a thyristor comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped emitter (5) are disposed consecutively in a vertical direction (v), starting a rear side (14) toward a front side (13) located opposite of the rear side (14). Furthermore, a trigger stage structure (AG) comprising at least one trigger stage (AG1, AG2, AG3, AG4) is provided, each stage comprising an n-doped trigger stage emitter (51, 52, 53, 54) that is spaced apart from the n-doped emitter (5) and embedded in the p-doped base (6). A trigger stage electrode (42) contacts one (52) of the trigger stage emitters (51, 52, 53, 54) at the front side (13) and has a first contact surface (421) with the latter. On a second contact surface (422), the trigger stage electrode (42) contacts the p-doped base (6) on the side of the one (52) trigger stage emitter at the front side (13) that faces the n-doped emitter (5). The second contact surface (422) is spaced apart both from the first contact surface (421) and from the one (52) trigger stage emitter.</p> |
