发明名称 Memristor and method of manufacture thereof
摘要 A memristor formed of two layers 2A and 2B having conductive areas 3 on those layers. There are nanowires 5A and 5B comprising for example zinc oxide extending from tracks 3 on each of the layers 2A and 2B, which typically are PCBs. The incorporation of nanowires with the PCBs may allow for the manufacture of small scale devices very efficiently.
申请公布号 GB201211278(D0) 申请公布日期 2012.08.08
申请号 GB20120011278 申请日期 2012.06.22
申请人 SWANSEA UNIVERSITY 发明人
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