发明名称 |
Resistive memory devices having a not-and(nand) structure |
摘要 |
Resistive memories having a not-and (NAND) structure including a resistive memory cell. The resistive memory cell includes a resistive memory element for storing a resistance value and a memory element access device for controlling access to the resistive memory element. The memory element access device is connected in parallel to the resistive memory element. |
申请公布号 |
GB2487825(A) |
申请公布日期 |
2012.08.08 |
申请号 |
GB20120000865 |
申请日期 |
2010.10.20 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MICHELE MARTINO FRANCESCHINI;LUIS LASTRAS-MONTANO;BIPIN RAJENDRAN;MATTHEW JOSEPH BREITWISCH;ROBERT KEVIN MONTOYE;GARY DITLOW |
分类号 |
G11C13/00;G11C15/04 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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