发明名称 |
SEMICONDUCTOR DEVICE WITH OXYGEN-DIFFUSION BARRIER LAYER AND METHOD FOR FABRICATING SAME |
摘要 |
<p>Methods are provided for fabricating a transistor. An exemplary method involves depositing an oxide layer overlying a layer of semiconductor material, forming an oxygen-diffusion barrier layer overlying the oxide layer, forming a layer of high-k dielectric material overlying the oxygen-diffusion barrier layer, forming a layer of conductive material overlying the layer of high-k dielectric material, selectively removing portions of the layer of conductive material, the layer of high-k dielectric material, the oxygen-diffusion barrier layer, and the oxide layer to form a gate stack, and forming source and drain regions about the gate stack. When the conductive material is an oxygen-gettering conductive material, the oxygen-diffusion barrier layer prevents diffusion of oxygen from the deposited oxide layer to the oxygen-gettering conductive material.</p> |
申请公布号 |
EP2483929(A2) |
申请公布日期 |
2012.08.08 |
申请号 |
EP20100819201 |
申请日期 |
2010.08.16 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
CHOWDHURY, MURSHED, M.;SCHAEFFER, JAMES, K. |
分类号 |
H01L29/78;H01L21/336;H01L21/8238;H01L29/49;H01L29/51 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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