OPERATING METHOD OF NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A method for operating a nonvolatile memory device is provided to improve program reliability of memory cells by programming the memory cells after string selection transistors and ground selection transistors are programmed. CONSTITUTION: First selection transistors are programmed(S110). Ground selection transistors are programmed(S120). A plurality of memory cells are programmed, read, and erased(S130). When the first selection transistors are programmed, a first voltage is supplied to a bit line connected to the first selection transistor which is programmed. A second voltage is supplied to a bit line connected to the first selection transistor which is not programmed. The second selection transistors are turned off. A first program voltage is supplied to the first selection line which is selected and a third voltage is supplied to the first selection line which is not selected.