SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to precisely control the properties of a device by forming a channel area, a source area and a gate structure in a self aligned manner. CONSTITUTION: A gate metal electrode(24) is installed near a surface(1a) of a semiconductor chip(2). An N+ drain area is installed on the rear surface of an N type substrate of the semiconductor chip. An active cell area(22) is installed on the central part of the semiconductor chip. The active cell area is composed of a number of unit periodic regions(T). A P+ edge termination area(23) in the shape of a ring is installed around the active cell area.