发明名称 |
POWER MANAGEMENT INTEGRATED CIRCUIT |
摘要 |
<p>PURPOSE: A power supply management device is provided to secure enough puncture voltage on an HS(High-Side) area and an LS(Low-Side) area by forming an electric field diffusion preventing part on the lower part of the metal wiring. CONSTITUTION: An HS area(200) is formed on a substrate(100). An LS area(300) is separately formed from the HS area by an element separation film(400). The metal wiring(500) is connected to the HS area through the element separation film. An electric field diffusion preventing part(700) is formed between the metal wiring and the element separation film and includes the metal and the polymer.</p> |
申请公布号 |
KR20120088274(A) |
申请公布日期 |
2012.08.08 |
申请号 |
KR20110009517 |
申请日期 |
2011.01.31 |
申请人 |
DONGBU HITEK CO., LTD. |
发明人 |
YOO, JAE HYUN;KIM, JONG MIN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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