SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
PURPOSE: A semiconductor element and a manufacturing method thereof are provided to prevent the defect of the semiconductor element due to moisture and gas of an inner film by increasing discharging paths of moisture and gas. CONSTITUTION: A first interlayer insulating film(14) is formed on a substrate(10). A first conductive pattern(20) and a second interlayer insulating film(22) are formed on the first interlayer insulating film. A second conductive pattern(28) is formed on the second interlayer insulating film. A third interlayer insulating film(30) is formed in the gap between the second conductive patterns.
申请公布号
KR20120088175(A)
申请公布日期
2012.08.08
申请号
KR20110009334
申请日期
2011.01.31
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
KIM, KOOK JOO;KIM, JIN HO;CHAE, SEUNG KI;JUN, PIL KWON;PARK, SUN HEE;BYUN, GYOUNG EUN