SILICON ELECTRODE PLATE FOR PLASMA ETCHING

摘要

PURPOSE: A silicon electrode plate for plasma etching is provided to suppress the occurrence of cracks by minimizing the unevenness of the surface during plasma etching. CONSTITUTION: A silicon electrode plate(12) is formed with a plurality of penetrated pores(5). A silicon wafer(4) is placed on a rack(3) in a vacuum vessel(1) of a plasma etching apparatus. A radio frequency voltage is applied between the silicon electrode plate and the rack by a radio frequency power source(6). A plasma(10) is generated in a space between the silicon electrode plate and the rack by applying the radio frequency voltage. The surface of the silicon wafer is etched through the physical reaction caused by the plasma.