发明名称 |
Method of improving oxide growth rate of selective oxidation processes |
摘要 |
<p>A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus (200) is used to selectively oxidize a substrate (214) by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate (214) are not oxidized.
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申请公布号 |
EP2040287(A3) |
申请公布日期 |
2012.08.08 |
申请号 |
EP20080164739 |
申请日期 |
2008.09.19 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YOKOTA, YOSHITAKA;TAM, NORMAN;RAMACHANDRAN, BALASUBRAMANIAN;RIPLEY, MARTIN JOHN |
分类号 |
H01L21/316;H01L21/28;H01L21/32 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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