| 摘要 |
PURPOSE: An internal voltage generating circuit is provided to improve the operation reliability of a semiconductor memory device by generating an internal voltage of a target level even though a ground voltage level is changed. CONSTITUTION: A reference voltage generating unit(100) generates a reference voltage. A reference voltage driving unit(200) generates a comparison reference voltage with a level corresponding to the level of the reference voltage. An internal voltage generating unit(300) generates the internal voltage with a constant level by comparing the level of the comparison reference voltage with the level of the internal voltage. |
